2n3819 Transistor

30-04-2021
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The 2N3819 is a N−Channel RF Amplifier transistor designed for RF amplifier and mixer applications operating up to 450Mhz, and for analog switching requiring low capacitance. Absolute Maximum Ratings: (T C = +25 C, Note 1 unless otherwise specified). Request Fairchild Semiconductor 2N3819: TRANSISTOR RF NCH 25V TO-92 online from Elcodis, view and download 2N3819 pdf datasheet, RF FETs specifications. The main components of this circuit are FET 2N3819, 555 timer IC, some resistors, and capacitors. FET or field-effect transistor is a transistor that uses the electric field to control the flow of current. 555 timer IC is used to provide oscillations or short/long. 2N3819 Transistor. £1.25 (inc VAT £1.50) 2N3904 Transistor. £0.35 (inc VAT £0.42) 2N3906 Transistor. £0.35 (inc VAT £0.42) 2N5401 Transistor. £0.29 (inc VAT £0.35) 2N5551 Transistor. £0.25 (inc VAT £0.30) Recently Viewed. 2N3819 Transistor. £1.25 (inc VAT £1.50) Account. Login; Forgot Password? Register; Special.

2N3819
TRANSISTOR RF NCH 25V TO-92
Fairchild Semiconductor
1.2N3819.pdf (3 pages)
N-Channel JFET
25V
50mA
TO-92-3 (Standard Body), TO-226
Single
N-Channel
350 mW
25 V
25 V
100 mA
50 mA
0.002 S to 0.0065 S
+ 150 C
25 V
- 65 C
Through Hole
Lead free / RoHS Compliant
-
2n3819
-
-
-
-
-
Lead free / RoHS Compliant

Available stocks

Part Number
Quantity
2N3819
FSC
200
2n3819 transistor datasheet

2n3819 Transistor Datasheet Pdf

2N3819
FAIRCHILD
38 000
2N3819
NATIONAL
1
3.75 USD
2N3819
FAIRCHILD
3.75 USD
2N3819
FAIRCHILD
23
3.75 USD
  • Current page: 1 of 3
N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications
Epitaxial Silicon Transistor
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
V
I
T
V
V
On Characteristics
Small Signal Characteristics
goss
C
P
R
GF
DSS
operating up to 450MHz, and for analog switching requiring low
Symbol
STG
GS
GS
D
rss
JC
Symbol
Forward Transfer Admittance
Gate Reverse Current
Gate-Source Voltage
Forward Transfer Conductance
Input Capacitance
Total Device Dissipation
Thermal Resistance, Junction to Case
Drain-Gate Voltage
Drain Current
Storage Temperature Range
1.6”
Parameter
A
=25 C unless otherwise noted
=25 C unless otherwise noted
T
=25 C unless otherwise noted
V
V
V
V
G
2N3819
DS
DS
DS
DS
= 1.0 A, V
= 15V, I
= -15V, V
= 15V, V
= 15V, V
Test Condition
D
DS
GS
GS

2n3819 Transistor Price

DS
= 200 A
= 0
= 0, f = 1.0KHz
= 0, f = 1.0KHz
= 0
350
357
1. Drain 2. Gate 3. Source
Min.
1600
1
-55 ~ 150
-25
50
Typ.
Max.
-7.5
8.0

2n3819 Transistor

4.0
50
Units
Rev. A1, December 2002
C/W
mA

Free 2n3055 Transistor Projects

V
C
mhos
mA
mhos
pF
V

2N3819 Summary of contents

Page 1

... Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.5” 1.6” 0.06” ©2002 Fairchild Semiconductor Corporation 2N3819 T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Condition ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, December 2002 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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